Discrete Semiconductor Products

SPA06N80C3XKSA1

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POWER MOSFET, N CHANNEL, 800 V, 6 A, 0.78 OHM, TO-220, THROUGH HOLE

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Discrete Semiconductor Products

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POWER MOSFET, N CHANNEL, 800 V, 6 A, 0.78 OHM, TO-220, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	SPA06N80C3XKSA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41 nC
Input Capacitance (Ciss) (Max) @ Vds	785 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	39 W
Rds On (Max) @ Id, Vgs	900 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Technology
INFINEON SPA06N80C3XKSA1	800 V	6 A	TO-220-3 Full Pack	N-Channel	Through Hole	10 V	785 pF	3.9 V	150 °C	-55 °C	41 nC	20 V	39 W	900 mOhm	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The SPA06N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is suitable for solar, PC Power and adapter applications.

Technical documentation and resources