Discrete Semiconductor Products

SIHFB20N50K-E3

LTB

MOSFET N-CH 500V 20A TO220AB

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 20A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHFB20N50K-E3

Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	110 nC
Input Capacitance (Ciss) (Max)	2870 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	280 W
Rds On (Max)	250 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Package Name	Power Dissipation (Max)	Gate Charge (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Vgs (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SIHFB20N50K-E3	500 V	2870 pF	TO-220AB	280 W	110 nC	250 mOhm	20 A	Through Hole	TO-220-3	N-Channel	10 V	5 V	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 2.75	1m+
	Tube	1000	$ 3.05	1m+

3D models and CAD resources for this part

General part information

N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-220AB

Technical documentation and resources