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BCX55-16,115
Discrete Semiconductor Products

BCX55-16,115

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Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 1 A NPN MEDIUM POWER TRANSISTORS

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BCX55-16,115
Discrete Semiconductor Products

BCX55-16,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 1 A NPN MEDIUM POWER TRANSISTORS

Technical Specifications

Parameters and characteristics for this part

SpecificationBCX55-16,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition180 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.25 W
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 16$ 0.50
30000$ 0.50
MouserN/A 1$ 0.41
10$ 0.28
100$ 0.17
500$ 0.13
1000$ 0.09
2000$ 0.08
5000$ 0.07
10000$ 0.07
25000$ 0.05

Description

General part information

BCX55-16 Series

NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.