Discrete Semiconductor Products

PHD18NQ10T,118

Obsolete

MOSFET N-CH 100V 18A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 18A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD18NQ10T,118

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	21 nC
Input Capacitance (Ciss) (Max)	633 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	79 W
Rds On (Max)	90 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs(th) (Max)	Gate Charge (Max)	Rds On (Max)	FET Type	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
NXP USA Inc. PHD18NQ10T,118	20 V	79 W	18 A	DPak	633 pF	-55 °C	175 °C	Surface Mount	4 V	21 nC	90 mOhm	N-Channel	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 18A (Tc) 79W (Tc) Surface Mount DPAK

Technical documentation and resources