Discrete Semiconductor Products

PHD18NQ10T,118

Obsolete

MOSFET N-CH 100V 18A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 18A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD18NQ10T,118

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	633 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs [Max]	90 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Freescale Semiconductor - NXP PHD18NQ10T,118	N-Channel	20 V	90 mOhm	100 V	DPAK	-55 °C	175 ░C	79 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	633 pF	21 nC	10 V	MOSFET (Metal Oxide)	18 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 18A (Tc) 79W (Tc) Surface Mount DPAK

Technical documentation and resources