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PBSS306PX-QX
Discrete Semiconductor Products

PBSS306PX-QX

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Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 100 V, 4.1 A PNP LOW VCESAT TRANSISTOR

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PBSS306PX-QX
Discrete Semiconductor Products

PBSS306PX-QX

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 100 V, 4.1 A PNP LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS306PX-QX
Current - Collector (Ic) (Max) [Max]3.7 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce200
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]0.6 W
QualificationAEC-Q101
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.31
MouserN/A 1$ 0.77
10$ 0.54
100$ 0.37
500$ 0.31
1000$ 0.26
2000$ 0.24
5000$ 0.22

Description

General part information

PBSS306PX-Q Series

PNP low VCEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.