
Discrete Semiconductor Products
PBSS306PX-QX
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 100 V, 4.1 A PNP LOW VCESAT TRANSISTOR
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Discrete Semiconductor Products
PBSS306PX-QX
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 100 V, 4.1 A PNP LOW VCESAT TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS306PX-QX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3.7 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 |
| Frequency - Transition | 100 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-243AA |
| Power - Max [Max] | 0.6 W |
| Qualification | AEC-Q101 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS306PX-Q Series
PNP low VCEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources