Discrete Semiconductor Products

AUIRF7379Q

Obsolete

MOSFET N/P-CH 30V 5.8A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 5.8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF7379Q

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	5.8 A, 4.3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Technology	Configuration	FET Feature	Package / Case	Package / Case	Package / Case	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON AUIRF7379Q	4.3 A 5.8 A	25 nC	520 pF	30 V	45 mOhm	2.5 W	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	8-SOIC	Surface Mount	3 V	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 30V 5.8A, 4.3A 2.5W Surface Mount 8-SOIC

Technical documentation and resources