Discrete Semiconductor Products
TPN4R712MD,L1Q
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, 0.0047 Ω@4.5V, TSON ADVANCE, U-MOSⅥ
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Discrete Semiconductor Products
TPN4R712MD,L1Q
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, 0.0047 Ω@4.5V, TSON ADVANCE, U-MOSⅥ
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Technical Specifications
Parameters and characteristics for this part
| Specification | TPN4R712MD,L1Q |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 36 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 65 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 42 W |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 6625 | $ 1.23 | |
Description
General part information
TPN4R712MD Series
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, 0.0047 Ω@4.5V, TSON Advance, U-MOSⅥ
Documents
Technical documentation and resources