Discrete Semiconductor Products

CP388X-BC108-CT

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TRANS NPN 25V 0.2A DIE

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Discrete Semiconductor Products

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TRANS NPN 25V 0.2A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	CP388X-BC108-CT

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	Die
Power - Max [Max]	0.6 W
Supplier Device Package	Die
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	25 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Central Semiconductor Corp CP388X-BC108-CT	25 V	Die	600 mV	Surface Mount	200 mA	200	15 nA	Die	0.6 W	150 °C	-65 °C
Central Semiconductor Corp CP388X-BC546B-WR	65 V	Die	600 mV	Surface Mount	100 mA	200	15 nA	Die	500 mW	150 °C	-65 °C
Central Semiconductor Corp CP388X-BC546B-CT	65 V	Die	600 mV	Surface Mount	100 mA	200	15 nA	Die	500 mW	150 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor 25 V 200 mA 600 mW Surface Mount Die

Technical documentation and resources