Discrete Semiconductor Products

IRF6100PBF

Obsolete

MOSFET P-CH 20V 5.1A 4FLIPFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 5.1A 4FLIPFET

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6100PBF

Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-FlipFet™
Power Dissipation (Max)	2.2 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	4-FlipFet™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id
INFINEON IRF6100PBF	65 mOhm	2.2 W	MOSFET (Metal Oxide)	20 V	1230 pF	Surface Mount	12 V	4-FlipFet™	P-Channel	5.1 A	4-FlipFet™	150 °C	-55 °C	2.5 V	4.5 V	1.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

P-Channel 20 V 5.1A (Ta) 2.2W (Ta) Surface Mount 4-FlipFet™

Technical documentation and resources