Discrete Semiconductor Products

SQJ872EP-T1_GE3

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MOSFET N-CH 150V 24.5A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 150V 24.5A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ872EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	24.5 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1045 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max) [Max]	55 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	35.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case
Vishay General Semiconductor - Diodes Division SQJ872EP-T1_GE3	MOSFET (Metal Oxide)	10 V	7.5 V	Automotive	AEC-Q101	22 nC	35.5 mOhm	N-Channel	1045 pF	PowerPAK® SO-8	-55 °C	175 ░C	24.5 A	Surface Mount	55 W	150 V	20 V	3.5 V	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 24.5A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources