Discrete Semiconductor Products

IPN70R2K1CEATMA1

Obsolete

INFINEON

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 700 V ; SOT-223 PACKAGE; 2100 MOHM; PRICE/PERFORMANCE

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Discrete Semiconductor Products

IPN70R2K1CEATMA1

Obsolete

INFINEON

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 700 V ; SOT-223 PACKAGE; 2100 MOHM; PRICE/PERFORMANCE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPN70R2K1CEATMA1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.8 nC
Input Capacitance (Ciss) (Max) @ Vds	163 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	5 W
Rds On (Max) @ Id, Vgs [Max]	2.1 Ohm
Supplier Device Package	PG-SOT223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPN70R2 Series

Part	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPN70R2K0P7SATMA1	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	10 V	16 V	3 A	Surface Mount	700 V	3.5 V	2 Ohm	N-Channel	-40 °C	150 °C	6 W	3.8 nC	PG-SOT223	130 pF
INFINEON IPN70R2K1CEATMA1	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	10 V	20 V	4 A	Surface Mount	700 V	3.5 V		N-Channel	-40 °C	150 °C	5 W		PG-SOT223-3	163 pF	7.8 nC	2.1 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.23

Description

General part information

IPN70R2 Series

CoolMOS™ CEis a technology platform of Infineon´s market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers600V, 650V and 700Vdevices targeting low power chargers for mobile devices and power tools,LCD,LED TVandLED lightingapplications.

Documents

Technical documentation and resources