Specification	XPJR6604PB,LXHQ

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	128 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	11380 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	5-PowerSFN
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.66 mOhm
Supplier Device Package	S-TOGL™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

XPJR6604PB Series

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 200 A, 0.00066 Ω@10V, S-TOGL

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Grade	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Supplier Device Package
Toshiba Semiconductor and Storage XPJR6604PB,LXHQ	11380 pF	175 °C	6 V 10 V	40 V	N-Channel	20 V	128 nC	AEC-Q101	0.66 mOhm	200 A	Surface Mount	Automotive	MOSFET (Metal Oxide)	3 V	375 W	5-PowerSFN	S-TOGL™

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5778	$ 2.47

General part information

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 200 A, 0.00066 Ω@10V, S-TOGL

Technical documentation and resources