Discrete Semiconductor Products

IDH12G65C5XKSA2

Active

INFINEON

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 650 V, 12 A, 18 NC, TO-220

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN

Discrete Semiconductor Products

IDH12G65C5XKSA2

Active

INFINEON

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 650 V, 12 A, 18 NC, TO-220

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDH12G65C5XKSA2

Capacitance @ Vr, F	360 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	190 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO220-2-1
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

IDH12G65 Series

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Capacitance @ Vr, F
INFINEON IDH12G65C5XKSA2	1.7 V	SiC (Silicon Carbide) Schottky	650 V	190 µA	TO-220-2	175 ░C	-55 °C	Through Hole	12 A	0 ns	PG-TO220-2-1	500 mA	360 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	567	$ 5.10
	Tube	1	$ 6.07
		10	$ 4.07
		100	$ 2.93
		500	$ 2.45
		1000	$ 2.36
Newark	Each	1	$ 5.45
		10	$ 4.91
		25	$ 2.92
		50	$ 2.80
		100	$ 2.67
		250	$ 2.44
		500	$ 2.20

Description

General part information

IDH12G65 Series

The CoolSiC™ Schottky diode 650 V, 12 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet