Discrete Semiconductor Products

MPS6521 PBFREE

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BIPOLAR TRANSISTORS - BJT NPN 40VCBO 25VCEO 4.0VEBO 100MA 625MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 40VCBO 25VCEO 4.0VEBO 100MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	MPS6521 PBFREE

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Frequency - Transition	400 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	25 V

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Package / Case	Transistor Type	Supplier Device Package
Central Semiconductor Corp MPS6521 PBFREE	100 mA	400 MHz	625 mW	25 V	150 °C	-65 °C	300	Through Hole	500 mV	100 nA	TO-226AA	TO-226-3 TO-92-3	NPN	TO-92-3

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General part information

BIPOLAR TRANSISTORS - BJT NPN 40VCBO 25VCEO 4.0VEBO 100MA 625MW

Technical documentation and resources

No documents available