RJK0222DNS-00#J5

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MOSFET 2N-CH 25V 14A/16A 8DFN

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Discrete Semiconductor Products

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MOSFET 2N-CH 25V 14A/16A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0222DNS-00#J5

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	14 A, 16 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds	810 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WDFN Exposed Pad
Power - Max	8 W, 10 W
Rds On (Max) @ Id, Vgs	9.2 mOhm
Supplier Device Package	8-DFN (5x6)
Technology	MOSFET (Metal Oxide)

Part	FET Feature	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max	Configuration	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case
Renesas Electronics Corporation RJK0222DNS-00#J5	4.5V Drive Logic Level Gate	9.2 mOhm	6.2 nC	8 W 10 W	2 N-Channel (Half Bridge)	MOSFET (Metal Oxide)	Surface Mount	14 A 16 A	810 pF	150 °C	25 V	8-DFN (5x6)	8-WDFN Exposed Pad

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	263	$ 1.14

General part information

Mosfet Array 25V 14A, 16A 8W, 10W Surface Mount 8-DFN (5x6)

Technical documentation and resources

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