Discrete Semiconductor Products

RJK0222DNS-00#J5

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MOSFET 2N-CH 25V 14A/16A 8DFN

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Discrete Semiconductor Products

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MOSFET 2N-CH 25V 14A/16A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0222DNS-00#J5

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C [Max]	16 A
Current - Continuous Drain (Id) @ 25°C [Min]	14 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	4.5 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	810 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WDFN Exposed Pad
Power - Max	10 W
Power - Max	8 W
Rds On (Max) @ Id, Vgs	9.2 mOhm
Supplier Device Package	8-DFN (5x6)
Technology	MOSFET (Metal Oxide)

Part	Power - Max	Power - Max	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Configuration	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Package / Case	FET Feature	FET Feature	Operating Temperature
Renesas Electronics Corporation RJK0222DNS-00#J5	10 W	8 W	6.2 nC	Surface Mount	25 V	9.2 mOhm	14 A	16 A	2 N-Channel	8-DFN (5x6)	810 pF	MOSFET (Metal Oxide)	8-WDFN Exposed Pad	4.5 V	Logic Level Gate	150 °C

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General part information

Mosfet Array 25V 14A, 16A 8W, 10W Surface Mount 8-DFN (5x6)

Technical documentation and resources

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