Discrete Semiconductor Products

BUK9Y12-80E,115

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MOSFET N-CH 80V LFPAK56 PWR-SO8

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Discrete Semiconductor Products

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MOSFET N-CH 80V LFPAK56 PWR-SO8

Technical Specifications

Parameters and characteristics for this part

Part	Package / Case	Technology	Mounting Type	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Qualification	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Grade
Freescale Semiconductor - NXP BUK9Y12-80E,115	SC-100 SOT-669	MOSFET (Metal Oxide)	Surface Mount	LFPAK56 Power-SO8	N-Channel	80 V
Freescale Semiconductor - NXP BUK9Y12-40E,115	SC-100 SOT-669	MOSFET (Metal Oxide)	Surface Mount	LFPAK56 Power-SO8	N-Channel	40 V	10 V	2.1 V	AEC-Q101	52 A	9.8 nC	65 W	5 V	1423 pF	10 mOhm	-55 °C	175 ░C	Automotive
Freescale Semiconductor - NXP BUK9Y12-100E,115	SC-100 SOT-669	MOSFET (Metal Oxide)	Surface Mount	LFPAK56 Power-SO8	N-Channel	100 V	10 V	2.1 V	AEC-Q101	85 A	64 nC		5 V	7973 pF	12 mOhm	-55 °C	175 ░C	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

N-Channel 80 V Surface Mount LFPAK56, Power-SO8

Technical documentation and resources

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