Discrete Semiconductor Products

PMZB200UNEYL

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MOSFET N-CH 30V 1.4A DFN1006B-3

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Discrete Semiconductor Products

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MOSFET N-CH 30V 1.4A DFN1006B-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZB200UNEYL

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.7 nC
Input Capacitance (Ciss) (Max) @ Vds	89 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	350 mW, 6.25 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Technology
Freescale Semiconductor - NXP PMZB200UNEYL	1.4 A	250 mOhm	6.25 W 350 mW	950 mV	1.5 V 4.5 V	2.7 nC	30 V	N-Channel	89 pF	Surface Mount	8 V	-55 °C	150 °C	DFN1006B-3	3-XFDFN	MOSFET (Metal Oxide)

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General part information

N-Channel 30 V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3

Technical documentation and resources