Specification	SSM3J15CT,L3F

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	9.1 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.7 V

SSM3J15CT Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-883(CST3)

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM3J15CT,L3F	CST3	12 Ohm	150 °C	Surface Mount	P-Channel	30 V	1.7 V	MOSFET (Metal Oxide)	SC-101 SOT-883	100 mA	4 V	2.5 V	9.1 pF	20 V	100 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-883(CST3)

Technical documentation and resources