Discrete Semiconductor Products

S3D08065G

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DIODE SIL CARB 650V 23A TO263-2

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 23A TO263-2

Technical Specifications

Parameters and characteristics for this part

Specification	S3D08065G

Capacitance @ Vr, F	661 pF
Current - Average Rectified (Io)	23 A
Current - Reverse Leakage @ Vr	51 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-263-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	8 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed
SMC Diode Solutions S3D08065G	1.8 V	8 A	23 A	661 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	51 µA	Surface Mount	TO-263-2	SiC (Silicon Carbide) Schottky	175 ░C	-55 °C	650 V	500 mA
SMC Diode Solutions S3D08065E	1.8 V	8 A	23 A	661 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	51 µA	Surface Mount	DPAK	SiC (Silicon Carbide) Schottky	175 ░C	-55 °C	650 V	500 mA
SMC Diode Solutions S3D08065A	1.8 V	8 A	23 A	661 pF	TO-220-2	51 µA	Through Hole	TO-220AC	SiC (Silicon Carbide) Schottky	175 ░C	-55 °C	650 V	500 mA

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General part information

Diode 650 V 23A Surface Mount TO-263-2

Technical documentation and resources