Discrete Semiconductor Products

S3D08065G

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DIODE SIL CARB 650V 23A TO263-2

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 23A TO263-2

Technical Specifications

Parameters and characteristics for this part

Specification	S3D08065G

Capacitance @ Vr, F	661 pF
Current - Average Rectified (Io)	23 A
Current - Reverse Leakage @ Vr	51 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-263-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Speed	Technology	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F
SMC Diode Solutions S3D08065G	TO-263-2	650 V	Surface Mount	1.8 V	23 A	No Recovery Time	SiC (Silicon Carbide) Schottky	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	51 µA	175 ░C	-55 C	661 pF
SMC Diode Solutions S3D08065E	DPAK	650 V	Surface Mount	1.8 V	23 A	No Recovery Time	SiC (Silicon Carbide) Schottky	DPAK (2 Leads + Tab) SC-63 TO-252-3	51 µA	175 ░C	-55 C	661 pF
SMC Diode Solutions S3D08065A	TO-220AC	650 V	Through Hole	1.8 V	23 A	No Recovery Time	SiC (Silicon Carbide) Schottky	TO-220-2	51 µA	175 ░C	-55 C	661 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 23A Surface Mount TO-263-2

Technical documentation and resources