Specification	FQU5N50CTU-WS

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	2.5 W, 48 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQU5N50C Series

Power MOSFET, N-Channel, QFET®, 500 V, 4 A, 1.4 mΩ, D2PAK

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
ON Semiconductor FQU5N50CTU-WS	500 V	1.4 Ohm	30 V	-55 °C	150 °C	4 A	24 nC	2.5 W 48 W	IPAK	10 V	MOSFET (Metal Oxide)	N-Channel	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	625 pF	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQU5N50C Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.