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DO-35
Discrete Semiconductor Products

1N5239B A0G

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Taiwan Semiconductor Corporation

DIODE ZENER 9.1V 500MW DO35

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DocumentsDatasheet
DO-35
Discrete Semiconductor Products

1N5239B A0G

Active
Taiwan Semiconductor Corporation

DIODE ZENER 9.1V 500MW DO35

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1N5239B A0G
Current - Reverse Leakage @ Vr3 µA
Impedance (Max) (Zzt) [Max]10 Ohms
Mounting TypeThrough Hole
Operating Temperature100 °C
Package / CaseDO-204AH, Axial, DO-35
Power - Max [Max]500 mW
Supplier Device PackageDO-35
Tolerance5 %
Voltage - Forward (Vf) (Max) @ If1.1 V
Voltage - Zener (Nom) (Vz)9.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

1N5239 Series

Zener Diode 9.1 V 500 mW ±5% Through Hole DO-35

Documents

Technical documentation and resources