Discrete Semiconductor Products

SI1302DL-T1-BE3

LTB

MOSFET N-CH 30V 600MA SC70-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 30V 600MA SC70-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI1302DL-T1-BE3

Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	280 mW
Rds On (Max) @ Id, Vgs	480 mOhm
Supplier Device Package	SC-70-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI1302DL-T1-BE3	30 V	N-Channel	-55 °C	150 °C	20 V	SC-70-3	SC-70 SOT-323	1.4 nC	Surface Mount	3 V	MOSFET (Metal Oxide)	600 mA	280 mW	480 mOhm

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General part information

N-Channel 30 V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3

Technical documentation and resources