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SOT1118
Discrete Semiconductor Products

PMDPB95XNE2X

Active
Nexperia USA Inc.

30 V, DUAL N-CHANNEL TRENCH MOSFET

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SOT1118
Discrete Semiconductor Products

PMDPB95XNE2X

Active
Nexperia USA Inc.

30 V, DUAL N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDPB95XNE2X
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C2.7 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs [Max]4.5 nC
Input Capacitance (Ciss) (Max) @ Vds258 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UFDFN Exposed Pad
Power - Max510 mW
Rds On (Max) @ Id, Vgs99 mOhm
Supplier Device Package6-HUSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.47
10$ 0.36
100$ 0.22
500$ 0.20
1000$ 0.14
Digi-Reel® 1$ 0.47
10$ 0.36
100$ 0.22
500$ 0.20
1000$ 0.14
N/A 880$ 0.77
440930$ 0.29
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
30000$ 0.11
75000$ 0.10

Description

General part information

PMDPB95 Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.