Discrete Semiconductor Products

NTP90N02

Obsolete

MOSFET N-CH 24V 90A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 24V 90A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	NTP90N02

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2120 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	5.8 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Power MOSFET 90 Amps, 24 Volts

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
ON Semiconductor NTP90N02	Through Hole	90 A	85 W	20 V	3 V	MOSFET (Metal Oxide)	TO-220-3	29 nC	TO-220	-55 °C	150 °C	N-Channel	2120 pF	4.5 V 10 V	5.8 mOhm	24 V
ON Semiconductor NTP90N02G	Through Hole	90 A	85 W	20 V	3 V	MOSFET (Metal Oxide)	TO-220-3	29 nC	TO-220	-55 °C	150 °C	N-Channel	2120 pF	4.5 V 10 V	5.8 mOhm	24 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Technical documentation and resources