Discrete Semiconductor Products

CTLDM303N-M832DS TR

Obsolete

MOSFET 2N-CH 30V 3.6A TLM832DS

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 3.6A TLM832DS

Technical Specifications

Parameters and characteristics for this part

Specification	CTLDM303N-M832DS TR

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	590 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TDFN Exposed Pad
Power - Max [Max]	1.65 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TLM832DS
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Power - Max [Max]	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Configuration	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Central Semiconductor Corp CTLDM303N-M832DS TR	30 V	TLM832DS	1.65 W	MOSFET (Metal Oxide)	40 mOhm	1.2 V	2 N-Channel (Dual)	13 nC	590 pF	150 °C	-55 °C	8-TDFN Exposed Pad	3.6 A	Surface Mount
Central Semiconductor Corp CTLDM303N-M832DS BK	30 V	TLM832DS	1.65 W	MOSFET (Metal Oxide)	40 mOhm	1.25 V	2 N-Channel (Dual)	13 nC	590 pF	150 °C	-55 °C	8-TDFN Exposed Pad	3.6 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 30V 3.6A 1.65W Surface Mount TLM832DS

Technical documentation and resources