Discrete Semiconductor Products

PHU66NQ03LT,127

Obsolete

MOSFET N-CH 25V 66A IPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 66A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHU66NQ03LT,127

Current - Continuous Drain (Id) @ 25°C	66 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	93 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	FET Type	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Freescale Semiconductor - NXP PHU66NQ03LT,127	N-Channel	MOSFET (Metal Oxide)	Through Hole	12 nC	860 pF	93 W	10 V	5 V	20 V	25 V	-55 °C	175 ░C	2 V	IPAK TO-251-3 Short Leads TO-251AA	10.5 mOhm	66 A	IPAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 66A (Tc) 93W (Tc) Through Hole IPAK

Technical documentation and resources