Discrete Semiconductor Products
TPN1200APL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0115 Ω@10V, TSON ADVANCE, U-MOSⅨ-H
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Discrete Semiconductor Products
TPN1200APL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0115 Ω@10V, TSON ADVANCE, U-MOSⅨ-H
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Technical Specifications
Parameters and characteristics for this part
| Specification | TPN1200APL,L1Q |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1855 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 630 mW, 104 W |
| Rds On (Max) @ Id, Vgs | 11.5 mOhm |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.21 | |
| 10 | $ 0.76 | |||
| 100 | $ 0.50 | |||
| 500 | $ 0.39 | |||
| 1000 | $ 0.35 | |||
| 2000 | $ 0.32 | |||
| Digi-Reel® | 1 | $ 1.21 | ||
| 10 | $ 0.76 | |||
| 100 | $ 0.50 | |||
| 500 | $ 0.39 | |||
| 1000 | $ 0.35 | |||
| 2000 | $ 0.32 | |||
| N/A | 12028 | $ 1.24 | ||
| Tape & Reel (TR) | 5000 | $ 0.29 | ||
| 10000 | $ 0.27 | |||
Description
General part information
TPN1200APL Series
12V - 300V MOSFETs, N-ch MOSFET, 100 V, 0.0115 Ω@10V, TSON Advance, U-MOSⅨ-H
Documents
Technical documentation and resources