BUK7M12-60EX

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MOSFET N-CH 60V 53A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 60V 53A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M12-60EX

Current - Continuous Drain (Id) @ 25°C	53 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1625 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	75 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Qualification	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP BUK7M12-60EX	-55 °C	175 ░C	Automotive	MOSFET (Metal Oxide)	60 V	24.8 nC	1625 pF	75 W	LFPAK33	10 V	53 A	20 V	AEC-Q101	N-Channel	12 mOhm	Surface Mount
Freescale Semiconductor - NXP BUK7M12-40EX	-55 °C	175 ░C	Automotive	MOSFET (Metal Oxide)	40 V	15.8 nC	979 pF		LFPAK33	10 V	48 A	20 V	AEC-Q101	N-Channel	12 mOhm	Surface Mount	55 W

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General part information

N-Channel 60 V 53A (Tc) 75W (Tc) Surface Mount LFPAK33

Technical documentation and resources