Discrete Semiconductor Products

PMPB215ENEA/FX

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MOSFET N-CH 80V 2.8A 6DFN

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Discrete Semiconductor Products

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MOSFET N-CH 80V 2.8A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB215ENEA/FX

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	215 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Technology	Supplier Device Package	FET Type	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Qualification
Freescale Semiconductor - NXP PMPB215ENEA/FX	MOSFET (Metal Oxide)	DFN2020MD-6	N-Channel	Surface Mount	20 V	215 pF	7.2 nC	2.7 V	-55 °C	150 °C	Automotive	6-UDFN Exposed Pad	4.5 V 10 V	80 V	2.8 A	230 mOhm	AEC-Q101

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General part information

N-Channel 80 V 2.8A (Ta) 1.6W (Ta) Surface Mount DFN2020MD-6

Technical documentation and resources