Zenode.ai Logo
Beta
No image
Discrete Semiconductor Products

GN1L4M-T2-A

Obsolete

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

GN1L4M-T2-A

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGN1L4M-T2-A
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce95
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Power - Max [Max]150 mW
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47000 Ohms
Supplier Device PackageSC-70
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 2664$ 0.11

Description

General part information

GA1L4M Series

Pre-Biased Bipolar Transistor (BJT)

Documents

Technical documentation and resources

No documents available