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Technical Specifications
Parameters and characteristics for this part
| Specification | GN1L4M-T2-A |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 95 |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Power - Max [Max] | 150 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47000 Ohms |
| Supplier Device Package | SC-70 |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 200 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 2664 | $ 0.11 | |
Description
General part information
GA1L4M Series
Pre-Biased Bipolar Transistor (BJT)
Documents
Technical documentation and resources
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