Discrete Semiconductor Products

SQ1464EEH-T1_GE3

Active

MOSFET N-CH 60V 440MA SC70-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 60V 440MA SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SQ1464EEH-T1_GE3

Current - Continuous Drain (Id) @ 25°C	440 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	430 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.41 Ohm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Grade	Qualification
Vishay General Semiconductor - Diodes Division SQ1464EEH-T1_GE3	6-TSSOP SC-88 SOT-363	-55 °C	175 ░C	SC-70-6	140 pF	N-Channel	MOSFET (Metal Oxide)	60 V	8 V	440 mA	430 mW	1.41 Ohm	Surface Mount	4.1 nC	1.5 V	1 V	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 440mA (Tc) 430mW (Tc) Surface Mount SC-70-6

Technical documentation and resources