Discrete Semiconductor Products

PMN42XPEAH

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MOSFET P-CH 20V 5.7A 6TSOP

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Discrete Semiconductor Products

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MOSFET P-CH 20V 5.7A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMN42XPEAH

Current - Continuous Drain (Id) @ 25°C	5.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	8.33 W, 500 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	46 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.25 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Grade	Technology
Freescale Semiconductor - NXP PMN42XPEAH	46 mOhm	Surface Mount	8.33 W 500 mW	1410 pF	AEC-Q101	20 V	5.7 A	12 V	17.3 nC	SC-74 SOT-457	2.5 V 4.5 V	P-Channel	6-TSOP	-55 °C	150 °C	1.25 V	Automotive	MOSFET (Metal Oxide)
Freescale Semiconductor - NXP PMN42XPEAX	46 mOhm	Surface Mount	8.33 W 500 mW	1410 pF	AEC-Q101	20 V	5.7 A	12 V	17.3 nC	SC-74 SOT-457	2.5 V 4.5 V	P-Channel	6-TSOP	-55 °C	150 °C	1.25 V	Automotive	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 5.7A (Ta) 500mW (Ta), 8.33W (Tc) Surface Mount 6-TSOP

Technical documentation and resources