Specification	FDD6N50TM

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.6 nC
Input Capacitance (Ciss) (Max) @ Vds	9400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDD6N50F Series

Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 5.5 A, 1.15 Ω, DPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDD6N50TM	-55 °C	150 °C	6 A	TO-252AA	9400 pF	500 V	16.6 nC	5 V	900 mOhm	Surface Mount	N-Channel	MOSFET (Metal Oxide)	30 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
ON Semiconductor FDD6N50FTM	-55 °C	150 °C	5.5 A	TO-252AA	960 pF	500 V		5 V	1.15 Ohm	Surface Mount	N-Channel	MOSFET (Metal Oxide)	30 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	19.8 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDD6N50F Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET®MOSFET has been enhanced by lifetime control. Its trris less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.