Discrete Semiconductor Products

PMBD6050,215

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PMBD6050 - HIGH-SPEED DIODE@EN-US TO-236 3-PIN

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Discrete Semiconductor Products

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PMBD6050 - HIGH-SPEED DIODE@EN-US TO-236 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PMBD6050,215

Capacitance @ Vr, F	1.5 pF
Current - Average Rectified (Io)	215 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-236AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	70 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Operating Temperature - Junction	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case
Freescale Semiconductor - NXP PMBD6050,215	150 °C	4 ns	100 nA	200 mA 500 ns	TO-236AB	215 mA	Surface Mount	70 V	1.5 pF	Standard	1.25 V	SC-59 SOT-23-3 TO-236-3

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General part information

Diode 70 V 215mA Surface Mount TO-236AB

Technical documentation and resources