Discrete Semiconductor Products

1SS250(TE85L,F)

NRND

DIODE GEN PURP 200V 100MA SC59

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 200V 100MA SC59

Technical Specifications

Parameters and characteristics for this part

Specification	1SS250(TE85L,F)

Capacitance @ Vr, F	3 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	60 ns
Speed	200 mA
Speed	Any Speed
Supplier Device Package	SC-59
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.2 V

Part	Supplier Device Package	Operating Temperature - Junction [Max]	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Speed	Speed	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type
Toshiba Semiconductor and Storage 1SS250(TE85L,F)	SC-59	125 °C	Standard	1.2 V	SC-59 SOT-23-3 TO-236-3	3 pF	60 ns	200 mA	Any Speed	100 mA	200 V	1 µA	Surface Mount

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General part information

Diode 200 V 100mA Surface Mount SC-59

Technical documentation and resources

No documents available