Discrete Semiconductor Products

SI1480DH-T1-GE3

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MOSFET N-CH 100V 2.6A SC70-6

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Discrete Semiconductor Products

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MOSFET N-CH 100V 2.6A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1480DH-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Input Capacitance (Ciss) (Max) @ Vds	130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	1.5 W, 2.8 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI1480DH-T1-GE3	6-TSSOP SC-88 SOT-363	4.5 V 10 V	100 V	130 pF	2.6 A	SC-70-6	3 V	20 V	Surface Mount	5 nC	1.5 W 2.8 W	MOSFET (Metal Oxide)	200 mOhm	N-Channel	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI1480DH-T1-BE3	6-TSSOP SC-88 SOT-363		100 V	130 pF	2.1 A 2.6 A	SC-70-6	3 V	20 V	Surface Mount	5 nC	1.5 W 2.8 W	MOSFET (Metal Oxide)	200 mOhm	N-Channel	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 2.6A (Tc) 1.5W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Technical documentation and resources