Discrete Semiconductor Products

SI7404DN-T1-E3

Obsolete

MOSFET N-CH 30V 8.5A PPAK 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 8.5A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7404DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	8.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI7404DN-T1-E3	12 V	1.5 V	1.5 W	PowerPAK® 1212-8	Surface Mount	30 V	13 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	10 V	2.5 V	N-Channel	PowerPAK® 1212-8	8.5 A	30 nC
Vishay General Semiconductor - Diodes Division SI7404DN-T1-GE3	12 V	1.5 V	1.5 W	PowerPAK® 1212-8	Surface Mount	30 V	13 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	10 V	2.5 V	N-Channel	PowerPAK® 1212-8	8.5 A	30 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 8.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources