Discrete Semiconductor Products

SI4442DY-T1-E3

LTB

MOSFET N-CH 30V 15A 8SO

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Discrete Semiconductor Products

LTB

MOSFET N-CH 30V 15A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4442DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI4442DY-T1-E3	N-Channel	8-SOIC	1.5 V	50 nC	8-SOIC	3.9 mm	0.154 in	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	12 V	10 V	2.5 V	4.5 mOhm	15 A

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General part information

N-Channel 30 V 15A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

Technical documentation and resources