Discrete Semiconductor Products

SIA436DJ-T1-GE3

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MOSFET N-CH 8V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET N-CH 8V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA436DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1508 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max) @ Id, Vgs	9.4 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	800 mV

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIA436DJ-T1-GE3	8 V	PowerPAK® SC-70-6	5 V	Surface Mount	800 mV	PowerPAK® SC-70-6	12 A	3.5 W 19 W	25.2 nC	1508 pF	-55 °C	150 °C	9.4 mOhm	N-Channel	MOSFET (Metal Oxide)	1.2 V 4.5 V

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General part information

N-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources