Discrete Semiconductor Products

VI20150SG-E3/4W

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DIODE SCHOTTKY 150V 20A TO262AA

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY 150V 20A TO262AA

Technical Specifications

Parameters and characteristics for this part

Specification	VI20150SG-E3/4W

Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Speed	500 ns, 200 mA
Supplier Device Package	TO-262AA
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

Part	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Qualification	Grade
Vishay General Semiconductor - Diodes Division VI20150SG-E3/4W	Schottky	Through Hole	1.6 V	200 µA	TO-262AA	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VI20150C-E3/4W	Schottky	Through Hole		150 µA	TO-262AA	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	200 mA 500 ns	10 A	1.2 V	1 Pair Common Cathode
Vishay General Semiconductor - Diodes Division VI20150C-M3/4W	Schottky	Through Hole		150 µA	TO-262AA	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	200 mA 500 ns	10 A	1.2 V	1 Pair Common Cathode	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division VI20150S-E3/4W	Schottky	Through Hole		250 µA	TO-262AA	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	200 mA 500 ns		1.43 V
Vishay General Semiconductor - Diodes Division VI20150SG-M3/4W	Schottky	Through Hole	1.6 V	200 µA	TO-262AA	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	200 mA 500 ns

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General part information

Diode 150 V 20A Through Hole TO-262AA

Technical documentation and resources