Discrete Semiconductor Products

BUK9M3R3-40HX

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MOSFET N-CH 40V 80A LFPAK33

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 80A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M3R3-40HX

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3766 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	101 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Qualification	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type
Freescale Semiconductor - NXP BUK9M3R3-40HX	2.15 V	101 W	3.3 mOhm	40 V	AEC-Q101	16 V	3766 pF	N-Channel	LFPAK33	Automotive	-55 °C	175 ░C	4.5 V 10 V	55 nC	MOSFET (Metal Oxide)	Surface Mount

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General part information

N-Channel 40 V 80A (Tc) 101W (Tc) Surface Mount LFPAK33

Technical documentation and resources