Discrete Semiconductor Products

RS1L120GNTB

NRND

MOSFET N-CH 60V 12A/36A 8HSOP

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Discrete Semiconductor Products

NRND

MOSFET N-CH 60V 12A/36A 8HSOP

Technical Specifications

Parameters and characteristics for this part

Specification	RS1L120GNTB

Current - Continuous Drain (Id) @ 25°C	36 A, 12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1330 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3 W
Rds On (Max) @ Id, Vgs	12.7 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Mounting Type	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor RS1L120GNTB	Surface Mount	20 V	MOSFET (Metal Oxide)	26 nC	3 W	N-Channel	12.7 mOhm	12 A 36 A	1330 pF	60 V	2.7 V	8-HSOP	150 °C	4.5 V 10 V	8-PowerTDFN
Rohm Semiconductor RS1L151ATTB1	Surface Mount	20 V	MOSFET (Metal Oxide)		3 W	P-Channel	11.3 mOhm	56 A	6900 pF	60 V	2.5 V	8-HSOP	150 °C	4.5 V 10 V	8-PowerTDFN	130 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 12A (Ta), 36A (Tc) 3W (Ta) Surface Mount 8-HSOP

Technical documentation and resources