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Technical Specifications
Parameters and characteristics for this part
| Specification | RQ1E100XNTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Power Dissipation (Max) [Max] | 550 mW |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.43 | |
Description
General part information
RQ1E100XN Series
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Documents
Technical documentation and resources