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Technical Specifications
Parameters and characteristics for this part
| Specification | SN74BCT2827CDWR |
|---|---|
| Current - Output High, Low [custom] | 12 mA |
| Current - Output High, Low [custom] | 1 mA |
| Logic Type | Buffer, Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Bits per Element | 10 |
| Number of Elements | 1 |
| Operating Temperature [Max] | 70 °C |
| Operating Temperature [Min] | 0 °C |
| Output Type | 3-State |
| Package / Case | 24-SOIC |
| Package / Case [custom] | 7.5 mm |
| Package / Case [custom] | 0.295 in |
| Supplier Device Package | 24-SOIC |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SN74BCT2827C Series
These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.
The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable (or) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.
The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.
Documents
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