Discrete Semiconductor Products

EMB9T2R

NRND

TRANS 2PNP PREBIAS 0.15W EMT6

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Discrete Semiconductor Products

NRND

TRANS 2PNP PREBIAS 0.15W EMT6

Technical Specifications

Parameters and characteristics for this part

Specification	EMB9T2R

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	68
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	EMT6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]
Rohm Semiconductor EMB9T2R	250 MHz	500 nA	2 PNP - Pre-Biased (Dual)	50 V	SOT-563 SOT-666	300 mV	47000 Ohms	68	EMT6	Surface Mount	100 mA

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General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Technical documentation and resources