Discrete Semiconductor Products

SI0301-TP

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N-CHANNEL MOSFET,SOT-23

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	SI0301-TP

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	54 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	830 mW
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Micro Commercial Components SI0301-TP	-55 °C	150 °C	Surface Mount	30 V	SOT-23	2.5 V 4.5 V	N-Channel	830 mW	1 V	750 mOhm	MOSFET (Metal Oxide)	500 mA	8 V	SC-59 SOT-23-3 TO-236-3	54 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 500mA 830mW Surface Mount SOT-23

Technical documentation and resources