Discrete Semiconductor Products

1N5809US

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DIODE GEN PURP 100V 6A

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Discrete Semiconductor Products

Unknown

DIODE GEN PURP 100V 6A

Technical Specifications

Parameters and characteristics for this part

Specification	1N5809US

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Package / Case	SQ-MELF
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	875 mV

Part	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Capacitance @ Vr, F	Speed	Package / Case	Grade	Qualification	Supplier Device Package
Semtech Corporation 1N5809US	5 µA	30 ns	Standard	100 V	6 A	Surface Mount	875 mV	60 pF	200 mA 500 ns	SQ-MELF
Semtech Corporation JANTX1N5809US	5 µA	30 ns	Standard	100 V	6 A	Surface Mount	875 mV	60 pF	200 mA 500 ns	SQ-MELF	Military	MIL-PRF-19500/477
Semtech Corporation JANTX1N5809	5 µA	30 ns	Standard	100 V	6 A	Through Hole	875 mV	60 pF	200 mA 500 ns	Axial	Military	MIL-PRF-19500/477	Axial
Semtech Corporation 1N5809	5 µA	30 ns	Standard	100 V	6 A	Through Hole	875 mV	60 pF	200 mA 500 ns	Axial			Axial

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 6A Surface Mount

Technical documentation and resources

No documents available