Discrete Semiconductor Products

MBRS260T3H

Obsolete

ON Semiconductor

DIODE SCHOTTKY 60V 2A SMB

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Search across all available documentation for this part.

Discrete Semiconductor Products

MBRS260T3H

Obsolete

ON Semiconductor

DIODE SCHOTTKY 60V 2A SMB

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MBRS260T3H

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	630 mV

MBRS260T3 Series

Schottky Power Rectifier, Surface Mount, 2.0 A, 60 V, SMB Package

Part	Speed	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Package / Case	Grade	Qualification
ON Semiconductor MBRS260T3H	200 mA 500 ns	630 mV	-55 °C	125 °C	SMB	Schottky	200 µA	60 V	Surface Mount	2 A	DO-214AA SMB
ON Semiconductor MBRS260T3G	200 mA 500 ns	630 mV	-55 °C	125 °C	SMB	Schottky	200 µA	60 V	Surface Mount	2 A	DO-214AA SMB
ON Semiconductor NRVBS260T3G	200 mA 500 ns	630 mV	-55 °C	125 °C	SMB	Schottky	200 µA	60 V	Surface Mount	2 A	DO-214AA SMB	Automotive	AEC-Q101
ON Semiconductor NRVBS260T3G-VF01	200 mA 500 ns	630 mV	-55 °C	125 °C	SMB	Schottky	200 µA	60 V	Surface Mount	2 A	DO-214AA SMB
ON Semiconductor MBRS260T3	200 mA 500 ns	630 mV	-55 °C	125 °C	SMB	Schottky	200 µA	60 V	Surface Mount	2 A	DO-214AA SMB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBRS260T3 Series

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

Documents

Technical documentation and resources

No documents available