Discrete Semiconductor Products

1N5397GH

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DIODE GEN PURP 600V 1.5A DO204AC

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 1.5A DO204AC

Technical Specifications

Parameters and characteristics for this part

Specification	1N5397GH

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-15, Axial, DO-204AC
Qualification	AEC-Q101
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-204AC (DO-15)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Package / Case	Qualification	Grade	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Technology	Capacitance @ Vr, F
Taiwan Semiconductor Corporation 1N5397GH	Axial DO-15 DO-204AC	AEC-Q101	Automotive	5 µA	1.5 A	-55 °C	150 °C	600 V	200 mA 500 ns	Through Hole	1 V	DO-204AC (DO-15)	Standard	15 pF
Taiwan Semiconductor Corporation 1N5397G	Axial DO-15 DO-204AC			5 µA	1.5 A	-55 °C	150 °C	600 V	200 mA 500 ns	Through Hole	1 V	DO-204AC (DO-15)	Standard	15 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1.5A Through Hole DO-204AC (DO-15)

Technical documentation and resources