Discrete Semiconductor Products
SCT2160KEHRC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 22 A, 1.2 KV, 0.16 OHM, TO-247N
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Discrete Semiconductor Products
SCT2160KEHRC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 22 A, 1.2 KV, 0.16 OHM, TO-247N
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT2160KEHRC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1200 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 165 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 208 mOhm |
| Supplier Device Package | TO-247N |
| Vgs (Max) [Max] | 22 V, -6 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT2160 Series
This is SiC (Silicon Carbide) planar MOSFET. This product have high voltage resistance, low ON resistance, and fast switching speed features. AEC-Q101 qualified automotive grade product.
Documents
Technical documentation and resources
